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| PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 PACKAGE DIMENSIONS 0.175 (4.44) 0.087 (2.22) O0.065 (1.65) 0.050 (1.27) 0.200 (5.08) O0.095 (2.41) 0.500 (12.70) MIN CATHODE ANODE 0.020 (0.51) SQ. (2X) SCHEMATIC 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM ANODE CATHODE NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The QEE113 is a 940 nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. FEATURES * * * * * * * * = 940 nm Package Type = Sidelooker Chip Material = GaAs Matched Photosensor: QSE113 Medium Wide Emission Angle, 50 Package Material: Clear Epoxy High Output Power Gray stripe on the top side (c) 2002 Fairchild Semiconductor Corporation Page 1 of 4 4/30/02 PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 100 Unit C C C C mA V mW Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25C) Parameter Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity Rise Time Fall Time Test Conditions IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA Symbol PE 21/2 VF IR IE tr tf Min -- -- -- -- 3 -- -- Typ 940 50 -- -- -- 1000 1000 Max -- -- 1.5 10 12 -- -- Units nm Deg. V A mW/sr ns ns (c) 2002 Fairchild Semiconductor Corporation Page 2 of 4 4/30/02 PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 Fig.1 Normalized Radiant Intensity vs. Forward Current Ie - NORMALIZED RADIANT INTENSITY 10 Normalized to: IF = 100 mA Pulsed tpw = 100 s Duty Cycle = 0.1 % TA = 25C Fig.2 Coupling Characteristics of QEE113 And QSE113 IC (ON) - NORMALIZED COLLECTOR CURRENT (mA) 1.0 Normalized to: d=0 IF Pulsed tpw = 100 s Duty Cycle = 0.1 % VCC = 5 V RL = 100 TA = 25C 0.8 1 0.6 0.1 0.4 IF = 100 mA 0.2 0.01 0.001 1 10 100 1000 0.0 IF = 20 mA 0 1 2 3 4 5 6 IF - FORWARD CURRENT (mA) LENS TIP SEPARATION (INCHES) Fig.3 Forward Voltage vs. Ambient Temperature 2.0 IF = 100 mA 1.0 0.9 IF = 50 mA 1.5 0.8 Fig. 4 Normalized Intensity vs. Wavelength VF - FORWARD VOLTAGE (V) NORMALIZED INTENSITY 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 875 900 925 950 975 1000 1025 1.0 IF = 20 mA IF = 10 mA 0.5 Normalized to: IF Pulsed tpw = 100 s Duty Cycle = 0.1 % -20 0 20 40 60 80 100 0.0 -40 TA - AMBIENT TEMPERATURE (C) (nm) Fig. 5 Radiation Diagram 110 120 130 140 150 160 170 180 100 90 80 70 60 50 40 30 20 10 0 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 (c) 2002 Fairchild Semiconductor Corporation Page 3 of 4 4/30/02 PLASTIC INFRARED LIGHT EMITTING DIODE QEE113 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2002 Fairchild Semiconductor Corporation Page 4 of 4 4/30/02 |
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